FQH8N100C
Part NoFQH8N100C
Manufactureronsemi
DescriptionMOSFET N-CH 1000V 8A TO247-3
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-247
SeriesQFET®
Rds On (Max) @ Id, Vgs1.45 Ohm @ 4A, 10V
Power Dissipation (Max)225W (Tc)
PackagingTube
Package / CaseTO-247-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds3220pF @ 25V
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)1000V
Detailed DescriptionN-Channel 1000V 8A (Tc) 225W (Tc) Through Hole TO-247
Current - Continuous Drain (Id) @ 25°C8A (Tc)
In Stock:
20218
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.63 | |
| 10 | 2.5774 | |
| 100 | 2.4985 | |
| 1000 | 2.4196 | |
| 10000 | 2.3144 |
Associated Product
