FQP13N10
Part NoFQP13N10
Manufactureronsemi
DescriptionMOSFET N-CH 100V 12.8A TO220-3
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesQFET®
Rds On (Max) @ Id, Vgs180 mOhm @ 6.4A, 10V
Power Dissipation (Max)65W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time7 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 12.8A (Tc) 65W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C12.8A (Tc)
In Stock:
16782
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.98 | |
| 10 | 0.9604 | |
| 100 | 0.931 | |
| 1000 | 0.9016 | |
| 10000 | 0.8624 |
Associated Product
