FQP6N80
Part NoFQP6N80
Manufactureronsemi
DescriptionMOSFET N-CH 800V 5.8A TO220-3
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesQFET®
Rds On (Max) @ Id, Vgs1.95 Ohm @ 2.9A, 10V
Power Dissipation (Max)158W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)800V
Detailed DescriptionN-Channel 800V 5.8A (Tc) 158W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C5.8A (Tc)
In Stock:
19370
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