FQU10N20TU_AM002
Part NoFQU10N20TU_AM002
Manufactureronsemi
DescriptionMOSFET N-CH 200V 7.6A IPAK
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageI-PAK
SeriesQFET®
Rds On (Max) @ Id, Vgs360 mOhm @ 3.8A, 10V
Power Dissipation (Max)2.5W (Ta), 51W (Tc)
PackagingTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature-
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds670pF @ 25V
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)200V
Detailed DescriptionN-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C7.6A (Tc)
In Stock:
6596
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Associated Product
