FQU2N90TU
Part NoFQU2N90TU
Manufactureronsemi
DescriptionMOSFET N-CH 900V 1.7A IPAK
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageI-PAK
SeriesQFET®
Rds On (Max) @ Id, Vgs7.2 Ohm @ 850mA, 10V
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
PackagingTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)900V
Detailed DescriptionN-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
In Stock:
16378
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4212 | |
| 10 | 0.4128 | |
| 100 | 0.4001 | |
| 1000 | 0.3875 | |
| 10000 | 0.3707 |
Associated Product
