IRLW610ATM

Part NoIRLW610ATM

ManufacturerON Semiconductor

DescriptionTrans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK T/R

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Specification

Vgs(th) (Max) @ Id2V @ 250µA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageI2PAK (TO-262)

Series-

Rds On (Max) @ Id, Vgs1.5 Ohm @ 1.65A, 5V

Power Dissipation (Max)3.1W (Ta), 33W (Tc)

PackagingTape & Reel (TR)

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds240pF @ 25V

Gate Charge (Qg) (Max) @ Vgs9nC @ 5V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)5V

Drain to Source Voltage (Vdss)200V

Detailed DescriptionN-Channel 200V 3.3A (Tc) 3.1W (Ta), 33W (Tc) Through Hole I2PAK (TO-262)

Current - Continuous Drain (Id) @ 25°C3.3A (Tc)

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