MJE253G
Part NoMJE253G
Manufactureronsemi
DescriptionTRANS PNP 100V 4A TO126
Datasheet
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ECAD Module
Specification
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Transistor TypePNP
Supplier Device PackageTO-225AA
Series-
Power - Max1.5W
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Other NamesMJE253GOS
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time9 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Frequency - Transition40MHz
Detailed DescriptionBipolar (BJT) Transistor PNP 100V 4A 40MHz 1.5W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 1V
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)4A
In Stock:
33116
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6254 | |
| 10 | 0.6129 | |
| 100 | 0.5941 | |
| 1000 | 0.5754 | |
| 10000 | 0.5504 |
Associated Product
