NTB52N10T4G
Part NoNTB52N10T4G
Manufactureronsemi
DescriptionMOSFET N-CH 100V 52A D2PAK
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD2PAK
Series-
Rds On (Max) @ Id, Vgs30 mOhm @ 26A, 10V
Power Dissipation (Max)2W (Ta), 178W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesNTB52N10T4GOS
NTB52N10T4GOS-ND
NTB52N10T4GOSTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds3150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs135nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 52A (Tc) 2W (Ta), 178W (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C52A (Tc)
In Stock:
17200
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Associated Product
