NTB65N02RT4G
RoHS

NTB65N02RT4G

Part NoNTB65N02RT4G
Manufactureronsemi
DescriptionMOSFET N-CH 25V 7.6A D2PAK
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ECAD Module NTB65N02RT4G
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Specification
Vgs(th) (Max) @ Id2V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD2PAK
Series-
Rds On (Max) @ Id, Vgs8.2 mOhm @ 30A, 10V
Power Dissipation (Max)1.04W (Ta), 62.5W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesNTB65N02RT4GOS
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1330pF @ 20V
Gate Charge (Qg) (Max) @ Vgs9.5nC @ 4.5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)25V
Detailed DescriptionN-Channel 25V 7.6A (Tc) 1.04W (Ta), 62.5W (Tc) Surface Mount D2PAK
Current - Continuous Drain (Id) @ 25°C7.6A (Tc)
In Stock: 18087
Pricing
QTY UNIT PRICE EXT PRICE
1 0.4076
10 0.3994
100 0.3872
1000 0.375
10000 0.3587
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
IXTY1R6N100D2
IXTY1R6N100D2
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