NTD12N10T4G
Part NoNTD12N10T4G
Manufactureronsemi
DescriptionMOSFET N-CH 100V 12A DPAK
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageDPAK
Series-
Rds On (Max) @ Id, Vgs165 mOhm @ 6A, 10V
Power Dissipation (Max)1.28W (Ta), 56.6W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesNTD12N10T4GOS
NTD12N10T4GOS-ND
NTD12N10T4GOSTR
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C12A (Ta)
In Stock:
21920
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Associated Product
