NTJD4158CT1G
RoHS

NTJD4158CT1G

Part NoNTJD4158CT1G
Manufactureronsemi
DescriptionMOSFET N/P-CH 30V/20V SC88
Datasheet Download Now!
ECAD Module NTJD4158CT1G
Get Quotation Now!
Specification
Vgs(th) (Max) @ Id1.5V @ 100µA
Supplier Device PackageSC-88/SC70-6/SOT-363
Series-
Rds On (Max) @ Id, Vgs1.5 Ohm @ 10mA, 4.5V
Power - Max270mW
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Other NamesNTJD4158CT1G-ND NTJD4158CT1GOSTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time50 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds33pF @ 5V
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 5V
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V, 20V
Detailed DescriptionMosfet Array N and P-Channel 30V, 20V 250mA, 880mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Current - Continuous Drain (Id) @ 25°C250mA, 880mA
Base Part NumberNTJD4158C
In Stock: 20114
Pricing
QTY UNIT PRICE EXT PRICE
1 0.3569
10 0.3498
100 0.3391
1000 0.3283
10000 0.3141
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
FDMS86368-F085
FDMS86368-F085
onsemi
MOSFET N-CH 80V 80A POWER56
SPP11N60S5HKSA1
SPP11N60S5HKSA1
Infineon
MOSFET N-CH 650V 11A TO220-3
TK6P53D(T6RSS-Q)
TK6P53D(T6RSS-Q)
TOSHIBA
MOSFET N-CH 525V 6A DPAK
IRLB8748PBF
IRLB8748PBF
Infineon
MOSFET N-CH 30V 92A TO220AB
PJD9P06A-AU_L2_000A1
PJD9P06A-AU_L2_000A1
Panjit
60V P-CHANNEL ENHANCEMENT MODE M
IRFH5110TRPBF
IRFH5110TRPBF
Infineon
MOSFET N-CH 100V 11A/63A 8PQFN
IRFSL4310PBF
IRFSL4310PBF
Infineon
MOSFET N-CH 100V 130A TO262