NTLJS3113PT1G
RoHS

NTLJS3113PT1G

Part NoNTLJS3113PT1G
Manufactureronsemi
DescriptionMOSFET P-CH 20V 3.5A 6WDFN
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ECAD Module NTLJS3113PT1G
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Specification
Vgs(th) (Max) @ Id1V @ 250µA
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package6-WDFN (2x2)
SeriesµCool™
Rds On (Max) @ Id, Vgs40 mOhm @ 3A, 4.5V
Power Dissipation (Max)700mW (Ta)
PackagingTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Other NamesNTLJS3113PT1G-ND NTLJS3113PT1GOSTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time6 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1329pF @ 16V
Gate Charge (Qg) (Max) @ Vgs15.7nC @ 4.5V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Drain to Source Voltage (Vdss)20V
Detailed DescriptionP-Channel 20V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
In Stock: 20876
Pricing
QTY UNIT PRICE EXT PRICE
1 0.2312
10 0.2266
100 0.2196
1000 0.2127
10000 0.2035
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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