NTMFS6B05NT1G

Part NoNTMFS6B05NT1G

ManufacturerON Semiconductor

DescriptionON SEMICONDUCTOR NTMFS6B05NT1G MOSFET Transistor, N Channel, 104 A, 100 V, 0.0065 ohm, 10 V, 4 V

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Specification

Vgs(th) (Max) @ Id4V @ 250µA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device Package5-DFN (5x6) (8-SOFL)

Series-

Rds On (Max) @ Id, Vgs8 mOhm @ 20A, 10V

Power Dissipation (Max)3.3W (Ta), 138W (Tc)

PackagingTape & Reel (TR)

Package / Case8-PowerTDFN

Other NamesNTMFS6B05NT1GOSTR

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Manufacturer Standard Lead Time42 Weeks

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds3100pF @ 50V

Gate Charge (Qg) (Max) @ Vgs44nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)6V, 10V

Drain to Source Voltage (Vdss)100V

Detailed DescriptionN-Channel 100V 16A (Ta), 104A (Tc) 3.3W (Ta), 138W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Current - Continuous Drain (Id) @ 25°C16A (Ta), 104A (Tc)

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