NVD5117PLT4G-VF01
Part NoNVD5117PLT4G-VF01
Manufactureronsemi
DescriptionMOSFET P-CH 60V 11A/61A DPAK
Datasheet
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Specification
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageDPAK
Series-
Rds On (Max) @ Id, Vgs16 mOhm @ 29A, 10V
Power Dissipation (Max)4.1W (Ta), 118W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesNVD5117PLT4G
NVD5117PLT4G-VF01TR
NVD5117PLT4GOSTR
NVD5117PLT4GOSTR-ND
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time40 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds4800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs85nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)60V
Detailed DescriptionP-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C11A (Ta), 61A (Tc)
In Stock:
15982
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 2.9848 | |
10 | 2.9251 | |
100 | 2.8356 | |
1000 | 2.746 | |
10000 | 2.6266 |