NVMFD5873NLT1G
RoHS

NVMFD5873NLT1G

Part NoNVMFD5873NLT1G
Manufactureronsemi
DescriptionMOSFET 2N-CH 60V 10A 8DFN
Datasheet Download Now!
ECAD Module NVMFD5873NLT1G
Get Quotation Now!
Specification
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual)
Series-
Rds On (Max) @ Id, Vgs13 mOhm @ 15A, 10V
Power - Max3.1W
PackagingOriginal-Reel®
Package / Case8-PowerTDFN
Other NamesNVMFD5873NLT1GOSDKR
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1560pF @ 25V
Gate Charge (Qg) (Max) @ Vgs30.5nC @ 10V
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Detailed DescriptionMosfet Array 2 N-Channel (Dual) 60V 10A 3.1W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Current - Continuous Drain (Id) @ 25°C10A
In Stock: 18875
Pricing
QTY UNIT PRICE EXT PRICE
1 2.346
10 2.2991
100 2.2287
1000 2.1583
10000 2.0645
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
CG2H40045F
CG2H40045F
MACOM
RF MOSFET HEMT 28V 440193
IRF6643TRPBF
IRF6643TRPBF
Infineon
MOSFET N-CH 150V 6.2A DIRECTFET
FQP44N10
FQP44N10
onsemi
MOSFET N-CH 100V 43.5A TO220-3
DMT43M8LFV-13
DMT43M8LFV-13
Diodes Inc.
MOSFET N-CH 40V 87A POWERDI3333
BSP296NH6327XTSA1
BSP296NH6327XTSA1
Infineon
MOSFET N-CH 100V 1.2A SOT223-4
PTFA192401EV4XWSA1
PTFA192401EV4XWSA1
Infineon
RF MOSFET LDMOS 30V H-36260-2
BSO211PNTMA1
BSO211PNTMA1
Infineon
MOSFET 2P-CH 20V 4.7A 8DSO
XP6A038MT
XP6A038MT
YAGEO XSEMI
MOSFET DUAL N CH 60V 6.7A PMPAK