AS1M025120T
Part NoAS1M025120T
ManufacturerAnBon
DescriptionN-CHANNEL SILICON CARBIDE POWER
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C65A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)34mOhm @ 50A, 20V
RdsOn(Max)@Id4V @ 15mA
Vgs195 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)4200 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature370W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
19084
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 41.4745 | |
| 10 | 40.645 | |
| 100 | 39.4008 | |
| 1000 | 38.1565 | |
| 10000 | 36.4976 |
Associated Product
