AS1M080120P
Part NoAS1M080120P
ManufacturerAnBon
DescriptionN-CHANNEL SILICON CARBIDE POWER
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeSiCFET (Silicon Carbide)
Technology-
DraintoSourceVoltage(Vdss)N-Channel
Current-ContinuousDrain(Id)@25°C1200 V
DriveVoltage(MaxRdsOn36A (Tc)
MinRdsOn)20V
RdsOn(Max)@Id98mOhm @ 20A, 20V
Vgs4V @ 5mA
Vgs(th)(Max)@Id79 nC @ 20 V
Vgs(Max)+25V, -10V
InputCapacitance(Ciss)(Max)@Vds1475 pF @ 1000 V
FETFeature192W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-247-3
GateCharge(Qg)(Max)@VgsTO-247-3
Grade
Qualification
In Stock:
13764
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 9.8986 | |
| 10 | 9.7006 | |
| 100 | 9.4037 | |
| 1000 | 9.1067 | |
| 10000 | 8.7108 |
Associated Product
