AOK060V65X2
RoHS

AOK060V65X2

Part NoAOK060V65X2
Description650V SILICON CARBIDE MOSFET
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ECAD Module AOK060V65X2
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Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs80mOhm @ 6A, 15V
Vgs(th) (Max) @ Id3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs39.4 nC @ 15 V
Vgs (Max)+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds1165 pF @ 400 V
FET Feature-
Power Dissipation (Max)103W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
Grade-
Qualification-
In Stock: 2107
Pricing
QTY UNIT PRICE EXT PRICE
1 9.06
10 8.879
100 8.61
1000 8.34
10000 7.97
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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