AOK065V120X2Q
RoHS

AOK065V120X2Q

Part NoAOK065V120X2Q
Description1200V SILICON CARBIDE MOSFET
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ECAD Module AOK065V120X2Q
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Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C40.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs85mOhm @ 10A, 15V
Vgs(th) (Max) @ Id3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs62.3 nC @ 15 V
Vgs (Max)+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds1716 pF @ 800 V
FET Feature-
Power Dissipation (Max)187.5W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
In Stock: 240
Pricing
QTY UNIT PRICE EXT PRICE
1 15.23
10 14.925
100 14.47
1000 14.01
10000 13.4
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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