AOK150V120X2Q
Part NoAOK150V120X2Q
ManufacturerAlpha & Omega Semiconductor Inc.
Description1200V SILICON CARBIDE MOSFET
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs195mOhm @ 3.9A, 15V
Vgs(th) (Max) @ Id3.6V @ 3.9mA
Gate Charge (Qg) (Max) @ Vgs28.3 nC @ 15 V
Vgs (Max)+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds664 pF @ 800 V
FET Feature-
Power Dissipation (Max)115W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3
In Stock:
240
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 9.25 | |
| 10 | 9.065 | |
| 100 | 8.79 | |
| 1000 | 8.51 | |
| 10000 | 8.14 |
Associated Product
