AOM020V120X2
Part NoAOM020V120X2
ManufacturerAlpha & Omega Semiconductor Inc.
Description1200V SILICON CARBIDE MOSFET
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs28mOhm @ 27A, 15V
Vgs(th) (Max) @ Id2.8V @ 27mA
Gate Charge (Qg) (Max) @ Vgs166 nC @ 15 V
Vgs (Max)+18V, -8V
Input Capacitance (Ciss) (Max) @ Vds5180 pF @ 800 V
FET Feature-
Power Dissipation (Max)348W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
Grade-
Qualification-
In Stock:
240
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 23.67 | |
| 10 | 23.197 | |
| 100 | 22.49 | |
| 1000 | 21.78 | |
| 10000 | 20.83 |
Associated Product
