AOT3N100
RoHS

AOT3N100

Part NoAOT3N100
DescriptionMOSFET N-CH 1000V 2.8A TO220
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ECAD Module AOT3N100
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Specification
PackageTube
Series-
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C2.8A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)6Ohm @ 1.5A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs20 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)830 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature132W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 10600
Pricing
QTY UNIT PRICE EXT PRICE
1 1.1136
10 1.0913
100 1.0579
1000 1.0245
10000 0.98
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product