AOTF2606L
RoHS

AOTF2606L

Part NoAOTF2606L
DescriptionMOSFET N-CH 60V 13A/54A TO220-3F
Datasheet Download Now!
ECAD Module AOTF2606L
Get Quotation Now!
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C13A (Ta), 54A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)6.5mOhm @ 20A, 10V
RdsOn(Max)@Id3.5V @ 250µA
Vgs75 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4050 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.1W (Ta), 36.5W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220F
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 10790
Pricing
QTY UNIT PRICE EXT PRICE
1 0.7881
10 0.7723
100 0.7487
1000 0.7251
10000 0.6935
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
IPZ40N04S55R4ATMA1
IPZ40N04S55R4ATMA1
Infineon
MOSFET N-CH 40V 40A 8TSDSON
IRL640L
IRL640L
Vishay Siliconix
MOSFET N-CH 200V 17A TO262-3
IPD12CN10NGBUMA1
IPD12CN10NGBUMA1
Infineon
MOSFET N-CH 100V 67A TO252-3
IPB45N06S409ATMA2
IPB45N06S409ATMA2
Infineon
MOSFET N-CH 60V 45A TO263-3
TK10P60W,RVQ
TK10P60W,RVQ
TOSHIBA
MOSFET N CH 600V 9.7A DPAK
SIR168DP-T1-GE3
SIR168DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK SO-8
SQJA61EP-T1_GE3
SQJA61EP-T1_GE3
Vishay Siliconix
MOSFET P-CHANNEL 60V 50A TO263