DG412DY-E3
Part NoDG412DY-E3
ManufacturerVishay
DescriptionDG412DY-E3, Analogue Switch Quad SPST, 15 V, 18 V, 24 V, 28 V, 16-Pin SOIC
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width4 mm
Height1.55 mm
Length10 mm
Weight665.986997 mg
PolarityNon-Inverting
Lead FreeLead Free
REACH SVHCUnknown
Resistance80 Ω
Schedule B8542390000, 8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|8542390000|85
Supply TypeDual, Single
Case/PackageSOIC N
Number of Pins16
Contact PlatingTin
Number of Inputs4
Number of Outputs4
Power Dissipation600 mW
Max Supply Current1 µA
Max Supply Voltage36 V
Min Supply Voltage13 V
Number of Channels4
Turn-On Delay Time175 ns
Dual Supply Voltage15 V
Radiation HardeningNo
Throw ConfigurationSPST
Turn-Off Delay Time145 ns
Max Power Dissipation600 mW
Nominal Supply Current100 pA
Max Dual Supply Voltage22 V
Min Dual Supply Voltage7 V
Operating Supply Current1 µA
Operating Supply Voltage15 V
High Level Output Current30 mA
Max Operating Temperature85 °C
Min Operating Temperature-40 °C
In Stock:
16490
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.5404 | |
| 10 | 2.4896 | |
| 100 | 2.4134 | |
| 1000 | 2.3372 | |
| 10000 | 2.2356 |
Associated Product
IRF9520NSTRRPBF
International Rectifier
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
International Rectifier
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
