IRFB9N65APBF

IRFB9N65APBF

Part NoIRFB9N65APBF
ManufacturerVishay
DescriptionMOSFET N-CH 650V 8.5A TO-220AB
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ECAD Module IRFB9N65APBF
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Specification
RoHSCompliant
MountThrough Hole
Width4.7 mm
Height9.01 mm
Length10.41 mm
Weight6.000006 g
Fall Time18 ns
Lead FreeLead Free
PackagingBulk
Rise Time20 ns
REACH SVHCUnknown
Rds On Max930 mΩ
Resistance930 mΩ
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Nominal Vgs4 V
Case/PackageTO-220AB
Recovery Time739 ns
Number of Pins3
Contact PlatingTin
Input Capacitance1.417 nF
Power Dissipation167 W
Threshold Voltage4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time14 ns
Radiation HardeningNo
Turn-Off Delay Time34 ns
Element ConfigurationSingle
Max Power Dissipation167 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance930 mΩ
Gate to Source Voltage (Vgs)30 V
Continuous Drain Current (ID)8.5 A
Drain to Source Voltage (Vdss)650 V
In Stock: 21205
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 3.014
10 2.9537
100 2.8633
1000 2.7729
10000 2.6523
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product