IRFD210
Part NoIRFD210
ManufacturerVishay
DescriptionMOSFET N-CH 200V 600MA 4-DIP
Datasheet
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Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package4-DIP, Hexdip, HVMDIP
Series-
Rds On (Max) @ Id, Vgs1.5 Ohm @ 360mA, 10V
Power Dissipation (Max)1W (Ta)
PackagingTube
Package / Case4-DIP (0.300", 7.62mm)
Other Names*IRFD210
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)200V
Detailed DescriptionN-Channel 200V 600mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
In Stock:
18771
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 1.0374 | |
10 | 1.0167 | |
100 | 0.9855 | |
1000 | 0.9544 | |
10000 | 0.9129 |