SI1013CX-T1-GE3
RoHS

SI1013CX-T1-GE3

Part NoSI1013CX-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 20V 0.45A SC89-3
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ECAD Module SI1013CX-T1-GE3
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Specification
RoHSCompliant
MountSurface Mount
Fall Time5 ns
PackagingTape & Reel (TR)
Rise Time8 ns
Rds On Max760 mΩ
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Case/PackageSOT-563-3
Number of Pins3
Input Capacitance45 pF
Power Dissipation190 mW
Number of Channels1
Number of Elements1
Turn-On Delay Time1 ns
Radiation HardeningNo
Turn-Off Delay Time9 ns
Max Power Dissipation190 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance630 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)450 mA
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage-20 V
In Stock: 17008
Pricing
QTY UNIT PRICE EXT PRICE
1 0.376
10 0.3685
100 0.3572
1000 0.3459
10000 0.3309
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product