SI1022R-T1-GE3
Part NoSI1022R-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 60V 330MA SC-75A
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width760 µm
Height700 µm
Length1.58 mm
Lead FreeLead Free
REACH SVHCNo SVHC
Rds On Max1.25 Ω
Resistance3 Ω
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Number of Pins3
Contact PlatingTin
Input Capacitance30 pF
Power Dissipation250 mW
Threshold Voltage2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time35 ns
Element ConfigurationSingle
Max Power Dissipation250 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance1.25 Ω
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)330 mA
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V
In Stock:
15799
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.504 | |
| 10 | 0.4939 | |
| 100 | 0.4788 | |
| 1000 | 0.4637 | |
| 10000 | 0.4435 |
Associated Product
