SI1034CX-T1-GE3
RoHS

SI1034CX-T1-GE3

Part NoSI1034CX-T1-GE3
ManufacturerVishay
DescriptionMOSFET 2N-CH 20V SC89-6
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ECAD Module SI1034CX-T1-GE3
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Specification
RoHSCompliant
MountSurface Mount
Height600 µm
Fall Time11 ns
PackagingTape & Reel (TR)
Rise Time16 ns
Rds On Max396 mΩ
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Case/PackageSC
Number of Pins6
Input Capacitance43 pF
Power Dissipation220 mW
Number of Channels2
Number of Elements2
Turn-On Delay Time11 ns
Radiation HardeningNo
Turn-Off Delay Time26 ns
Max Power Dissipation220 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance330 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)610 mA
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V
In Stock: 19818
Pricing
QTY UNIT PRICE EXT PRICE
1 0.3395
10 0.3327
100 0.3225
1000 0.3123
10000 0.2988
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product