SI1302DL-T1-E3
Part NoSI1302DL-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 600MA SOT323-3
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.25 mm
Height1 mm
Length2 mm
Weight6.208546 mg
Fall Time7 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time8 ns
REACH SVHCNo SVHC
Rds On Max480 mΩ
Resistance480 mΩ
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Nominal Vgs3 V
Case/PackageSC
Number of Pins3
Power Dissipation310 mW
Threshold Voltage1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time5 ns
Turn-Off Delay Time8 ns
Element ConfigurationSingle
Max Power Dissipation310 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance480 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)640 mA
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
24075
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3864 | |
| 10 | 0.3787 | |
| 100 | 0.3671 | |
| 1000 | 0.3555 | |
| 10000 | 0.34 |
Associated Product
