SI1416EDH-T1-GE3
Part NoSI1416EDH-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 3.9A SOT-363
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.35 mm
Height1 mm
Length2.2 mm
Weight28.009329 mg
Fall Time45 ns
Lead FreeLead Free
PackagingTape and Reel
Rise Time60 ns
Rds On Max58 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOT-363
Number of Pins6
Power Dissipation1.56 W
Number of Channels1
Number of Elements1
Turn-On Delay Time1.5 ns
Turn-Off Delay Time15 ns
Element ConfigurationSingle
Max Power Dissipation2.8 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance47 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)3.9 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
20407
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.459 | |
| 10 | 0.4498 | |
| 100 | 0.436 | |
| 1000 | 0.4223 | |
| 10000 | 0.4039 |
Associated Product
