SI1905BDH-T1-E3
Part NoSI1905BDH-T1-E3
ManufacturerVishay
DescriptionMOSFET 2P-CH 8V 0.63A SC70-6
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time60 ns
Lead FreeLead Free
Rise Time40 ns
REACH SVHCUnknown
Rds On Max542 mΩ
Resistance542 MΩ
Nominal Vgs-1 V
Case/PackageSC
Number of Pins6
Input Capacitance62 pF
Power Dissipation3.01 W
Threshold Voltage-1 V
Number of Elements2
Turn-On Delay Time9 ns
Radiation HardeningNo
Turn-Off Delay Time50 ns
Element ConfigurationDual
Max Power Dissipation357 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance542 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)580 mA
Drain to Source Voltage (Vdss)-8 V
In Stock:
17178
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Associated Product
