SI1926DL-T1-E3
Part NoSI1926DL-T1-E3
ManufacturerVishay
DescriptionMOSFET 2N-CH 60V 0.37A SC-70-6
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.25 mm
Height1 mm
Length2 mm
Weight28.009329 mg
Fall Time12 ns
Lead FreeLead Free
Rise Time12 ns
REACH SVHCNo SVHC
Rds On Max1.4 Ω
Resistance1.4 Ω
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Case/PackageSC
Number of Pins6
Contact PlatingTin
Input Capacitance18.5 pF
Power Dissipation300 mW
Threshold Voltage2.5 V
Number of Channels2
Number of Elements2
Turn-On Delay Time6.5 ns
Radiation HardeningNo
Turn-Off Delay Time13 ns
Element ConfigurationDual
Max Power Dissipation510 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance1.4 Ω
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)340 mA
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V
In Stock:
15948
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4 | |
| 10 | 0.392 | |
| 100 | 0.38 | |
| 1000 | 0.368 | |
| 10000 | 0.352 |
Associated Product
