SI1926DL-T1-GE3
Part NoSI1926DL-T1-GE3
ManufacturerVishay
DescriptionMOSFET 2N-CH 60V 0.37A SOT363
Datasheet
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Specification
RoHSCompliant
MountSurface Mount
Fall Time14 ns
PackagingTape & Reel (TR)
Rise Time12 ns
Rds On Max1.4 Ω
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Number of Pins3
Contact PlatingTin
Input Capacitance18.5 pF
Turn-On Delay Time6.5 ns
Radiation HardeningNo
Turn-Off Delay Time13 ns
Max Power Dissipation510 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)370 mA
Drain to Source Voltage (Vdss)60 V
In Stock:
19286
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.412 | |
10 | 0.4038 | |
100 | 0.3914 | |
1000 | 0.379 | |
10000 | 0.3626 |