SI1926DL-T1-GE3
RoHS

SI1926DL-T1-GE3

Part NoSI1926DL-T1-GE3
ManufacturerVishay
DescriptionMOSFET 2N-CH 60V 0.37A SOT363
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ECAD Module SI1926DL-T1-GE3
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Specification
RoHSCompliant
MountSurface Mount
Fall Time14 ns
PackagingTape & Reel (TR)
Rise Time12 ns
Rds On Max1.4 Ω
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Number of Pins3
Contact PlatingTin
Input Capacitance18.5 pF
Turn-On Delay Time6.5 ns
Radiation HardeningNo
Turn-Off Delay Time13 ns
Max Power Dissipation510 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)370 mA
Drain to Source Voltage (Vdss)60 V
In Stock: 19286
Pricing
QTY UNIT PRICE EXT PRICE
1 0.412
10 0.4038
100 0.3914
1000 0.379
10000 0.3626
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product