SI2305ADS-T1-GE3
Part NoSI2305ADS-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 8V 5.4A SOT23-3
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Fall Time11 ns
Lead FreeLead Free
Rise Time11 ns
REACH SVHCUnknown
Rds On Max40 mΩ
Resistance40 MΩ
Nominal Vgs-800 mV
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance740 pF
Power Dissipation960 mW
Threshold Voltage-800 mV
Number of Elements1
Radiation HardeningNo
Turn-Off Delay Time22 ns
Element ConfigurationSingle
Max Power Dissipation960 mW
Max Operating Temperature150 °C
Min Operating Temperature-50 °C
Drain to Source Resistance40 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)4.1 A
Drain to Source Voltage (Vdss)-8 V
Drain to Source Breakdown Voltage8 V
In Stock:
19746
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