SI2316DS-T1-E3
Part NoSI2316DS-T1-E3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 2.9A SOT23-3
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Current2 A
Voltage30 V
Fall Time9 ns
Lead FreeLead Free
Rise Time9 ns
REACH SVHCUnknown
Rds On Max50 mΩ
Resistance50 mΩ
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Nominal Vgs800 mV
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance215 pF
Power Dissipation700 mW
Number of Channels1
Number of Elements1
Turn-On Delay Time9 ns
Radiation HardeningNo
Turn-Off Delay Time14 ns
Element ConfigurationSingle
Max Power Dissipation700 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance50 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)2.9 A
Drain to Source Voltage (Vdss)30 V
In Stock:
20412
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.869 | |
| 10 | 0.8516 | |
| 100 | 0.8256 | |
| 1000 | 0.7995 | |
| 10000 | 0.7647 |
Associated Product
