SI2319CDS-T1-GE3
Part NoSI2319CDS-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 40V 4.4A SOT-23
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Lead FreeLead Free
PackagingCut Tape
REACH SVHCUnknown
Rds On Max77 mΩ
Resistance77 mΩ
Schedule B8541290080
Nominal Vgs-1.2 V
Case/PackageSOT-23
Number of Pins3
Contact PlatingTin
Input Capacitance595 pF
Power Dissipation1.25 W
Threshold Voltage-2.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time40 ns
Radiation HardeningNo
Turn-Off Delay Time18 ns
Element ConfigurationSingle
Max Power Dissipation2.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance64 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-4.4 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-40 V
Drain to Source Breakdown Voltage-40 V
In Stock:
44289
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.561 | |
| 10 | 0.5498 | |
| 100 | 0.533 | |
| 1000 | 0.5161 | |
| 10000 | 0.4937 |
Associated Product
