SI2328DS-T1-GE3
Part NoSI2328DS-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 100V 1.15A SOT-23
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Fall Time10 ns
Lead FreeLead Free
PackagingCut Tape (CT)
Rise Time11 ns
REACH SVHCNo SVHC
Rds On Max250 mΩ
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Case/PackageSOT-23
Number of Pins3
Contact PlatingTin
Power Dissipation730 mW
Threshold Voltage4 V
Number of Channels1
Number of Elements1
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time9 ns
Element ConfigurationSingle
Max Power Dissipation730 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance250 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)1.15 A
Drain to Source Voltage (Vdss)100 V
In Stock:
16592
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6972 | |
| 10 | 0.6833 | |
| 100 | 0.6623 | |
| 1000 | 0.6414 | |
| 10000 | 0.6135 |
Associated Product
