SI2333CDS-T1-GE3
RoHS

SI2333CDS-T1-GE3

Part NoSI2333CDS-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 12V 7.1A SOT-23
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ECAD Module SI2333CDS-T1-GE3
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Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Current71 A
Voltage12 V
Fall Time35 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time35 ns
REACH SVHCUnknown
Rds On Max35 mΩ
Resistance35 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs-1 V
Case/PackageSOT-23
Number of Pins3
Contact PlatingTin
Input Capacitance1.225 nF
Power Dissipation1.25 W
Threshold Voltage-400 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time13 ns
Radiation HardeningNo
Turn-Off Delay Time45 ns
Element ConfigurationSingle
Max Power Dissipation2.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance28.5 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)-5.1 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-12 V
Drain to Source Breakdown Voltage-12 V
In Stock: 36825
Pricing
QTY UNIT PRICE EXT PRICE
1 0.528
10 0.5174
100 0.5016
1000 0.4858
10000 0.4646
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product