SI2333DDS-T1-GE3
Part NoSI2333DDS-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 12V 6A SOT23
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Fall Time20 ns
Lead FreeLead Free
Rise Time24 ns
REACH SVHCNo SVHC
Rds On Max28 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOT-23
Number of Pins3
Input Capacitance1.275 nF
Power Dissipation1.2 W
Threshold Voltage-1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time26 ns
Radiation HardeningNo
Turn-Off Delay Time45 ns
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance23 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)-6 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-12 V
Drain to Source Breakdown Voltage-12 V
In Stock:
36834
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.348 | |
| 10 | 0.341 | |
| 100 | 0.3306 | |
| 1000 | 0.3202 | |
| 10000 | 0.3062 |
Associated Product
