SI2333DS-T1-GE3
Part NoSI2333DS-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 12V 4.1A SOT23-3
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Weight1.437803 g
Fall Time60 ns
REACH SVHCUnknown
Rds On Max32 mΩ
Nominal Vgs-1 V
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance1.1 nF
Threshold Voltage-1 V
Number of Channels1
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time72 ns
Element ConfigurationSingle
Max Power Dissipation750 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance32 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)4.1 A
Drain to Source Voltage (Vdss)-12 V
In Stock:
15975
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7221 | |
| 10 | 0.7077 | |
| 100 | 0.686 | |
| 1000 | 0.6643 | |
| 10000 | 0.6354 |
Associated Product
