SI2356DS-T1-GE3
Part NoSI2356DS-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 40V 4.3A SOT-23
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height1.12 mm
Weight1.437803 g
Fall Time53 ns
Lead FreeLead Free
Rise Time52 ns
REACH SVHCNo SVHC
Rds On Max51 mΩ
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance370 pF
Power Dissipation960 mW
Threshold Voltage1.5 V
Number of Channels1
Turn-On Delay Time6 ns
Turn-Off Delay Time13 ns
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance42 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)3.2 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)40 V
Drain to Source Breakdown Voltage40 V
In Stock:
25398
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4446 | |
| 10 | 0.4357 | |
| 100 | 0.4224 | |
| 1000 | 0.409 | |
| 10000 | 0.3912 |
Associated Product
