SI3410DV-T1-GE3
Part NoSI3410DV-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 8A 6-TSOP
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height1.1 mm
Weight19.986414 mg
Fall Time9 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time14 ns
REACH SVHCUnknown
Rds On Max19.5 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs3 V
Case/PackageTSOP
Number of Pins6
Input Capacitance1.295 nF
Power Dissipation2 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Max Power Dissipation2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance16 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)8 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
22986
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.728 | |
| 10 | 0.7134 | |
| 100 | 0.6916 | |
| 1000 | 0.6698 | |
| 10000 | 0.6406 |
Associated Product
BUK963R2-40B
Nexperia
Power Field-Effect Transistor, 100A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Nexperia
Power Field-Effect Transistor, 100A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
