SI3421DV-T1-GE3
Part NoSI3421DV-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 30V 8A TSOP-6
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height1.1 mm
Weight19.986414 mg
Fall Time13 ns
PackagingTape & Reel (TR)
Rise Time9 ns
REACH SVHCUnknown
Rds On Max19.2 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTSOP
Number of Pins6
Input Capacitance2.58 nF
Power Dissipation2 W
Threshold Voltage-3 V
Number of Channels1
Turn-On Delay Time7 ns
Turn-Off Delay Time55 ns
Max Power Dissipation4.2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance16 mΩ
Gate to Source Voltage (Vgs)-20 V
Continuous Drain Current (ID)-8.3 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V
In Stock:
19876
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.555 | |
| 10 | 0.5439 | |
| 100 | 0.5272 | |
| 1000 | 0.5106 | |
| 10000 | 0.4884 |
Associated Product
