SI3456DDV-T1-GE3
Part NoSI3456DDV-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 30V 6.3A 6-TSOP
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Weight19.986414 mg
Fall Time13 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time13 ns
REACH SVHCNo SVHC
Rds On Max40 mΩ
Resistance40 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTSOP
Number of Pins6
Input Capacitance325 pF
Power Dissipation1.7 W
Threshold Voltage1.2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time12 ns
Radiation HardeningNo
Turn-Off Delay Time16 ns
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance40 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)5 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
26939
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4879 | |
| 10 | 0.4781 | |
| 100 | 0.4635 | |
| 1000 | 0.4489 | |
| 10000 | 0.4294 |
Associated Product
ISPLSI5512VE-155LF388
Lattice Semiconductor
Complex Programmable Logic Devices - CPLDs PROGRAM SUPERWIDE HI DENSITY PLD
Lattice Semiconductor
Complex Programmable Logic Devices - CPLDs PROGRAM SUPERWIDE HI DENSITY PLD
