SI3457BDV-T1-E3
RoHS

SI3457BDV-T1-E3

Part NoSI3457BDV-T1-E3
ManufacturerVishay
DescriptionMOSFET P-CH 30V 3.7A 6-TSOP
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ECAD Module SI3457BDV-T1-E3
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Specification
RoHSCompliant
MountSurface Mount
Width1.7018 mm
Height990.6 µm
Length3.0988 mm
Fall Time10 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time10 ns
REACH SVHCNo SVHC
Rds On Max54 mΩ
Resistance54 mΩ
Nominal Vgs-3 V
TerminationSMD/SMT
Case/PackageTSOP
Number of Pins6
Power Dissipation1.14 W
Threshold Voltage-3 V
Number of Elements1
Turn-On Delay Time7 ns
Dual Supply Voltage-30 V
Radiation HardeningNo
Turn-Off Delay Time30 ns
Element ConfigurationSingle
Max Power Dissipation1.14 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance54 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)3.7 A
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage30 V
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Shipping Information
Shiped FromShenZhen Warehourse
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Associated Product