SI3457CDV-T1-GE3
Part NoSI3457CDV-T1-GE3
ManufacturerVishay
DescriptionMOSFET P-CH 30V 5.1A 6-TSOP
Datasheet
Download Now!
ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.65 mm
Height1 mm
Length3.05 mm
Weight19.986414 mg
Fall Time12 ns
Lead FreeLead Free
PackagingCut Tape
Rise Time80 ns
REACH SVHCNo SVHC
Rds On Max74 mΩ
Resistance74 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTSOP
Number of Pins6
Contact PlatingTin
Input Capacitance450 pF
Power Dissipation2 W
Threshold Voltage-1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time40 ns
Radiation HardeningNo
Turn-Off Delay Time20 ns
Element ConfigurationSingle
Max Power Dissipation2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance60 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)-4.1 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V
In Stock:
26366
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4212 | |
| 10 | 0.4128 | |
| 100 | 0.4001 | |
| 1000 | 0.3875 | |
| 10000 | 0.3707 |
Associated Product
