SI3458BDV-T1-GE3
Part NoSI3458BDV-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 60V 4.1A 6-TSOP
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.65 mm
Height1 mm
Length3.05 mm
Weight19.986414 mg
Fall Time10 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time12 ns
REACH SVHCUnknown
Rds On Max100 mΩ
Resistance100 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs3 V
Case/PackageTSOP
Number of Pins6
Input Capacitance350 pF
Power Dissipation2 W
Threshold Voltage3 V
Number of Channels1
Number of Elements1
Turn-On Delay Time5 ns
Radiation HardeningNo
Turn-Off Delay Time18 ns
Element ConfigurationSingle
Max Power Dissipation2 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance100 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)3.2 A
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V
In Stock:
18543
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7047 | |
| 10 | 0.6906 | |
| 100 | 0.6695 | |
| 1000 | 0.6483 | |
| 10000 | 0.6201 |
Associated Product
