SI3464DV-T1-GE3
Part NoSI3464DV-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 20V 8A 6-TSOP
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.65 mm
Height1.1 mm
Length3.05 mm
Weight19.986414 mg
Fall Time8 ns
PackagingTape & Reel (TR)
Rise Time12 ns
REACH SVHCUnknown
Rds On Max24 mΩ
Nominal Vgs450 mV
Case/PackageTSOP
Number of Pins6
Input Capacitance1.065 nF
Power Dissipation2 W
Number of Channels1
Number of Elements1
Turn-On Delay Time3 ns
Radiation HardeningNo
Turn-Off Delay Time22 ns
Max Power Dissipation3.6 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance20 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)8 A
Drain to Source Voltage (Vdss)20 V
Drain to Source Breakdown Voltage20 V
In Stock:
17930
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.606 | |
| 10 | 0.5939 | |
| 100 | 0.5757 | |
| 1000 | 0.5575 | |
| 10000 | 0.5333 |
Associated Product
