SI3474DV-T1-GE3
Part NoSI3474DV-T1-GE3
ManufacturerVishay
DescriptionMOSFET N-CH 100V 3.8A TSOP-6
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Height1.1 mm
Fall Time20 ns
Rise Time68 ns
REACH SVHCNo SVHC
Rds On Max126 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageTSOP
Number of Pins6
Contact PlatingTin
Input Capacitance196 pF
Power Dissipation2 W
Number of Channels1
Number of Elements1
Turn-On Delay Time8 ns
Radiation HardeningNo
Turn-Off Delay Time10 ns
Element ConfigurationSingle
Max Power Dissipation3.6 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance102 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)2.8 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)100 V
Drain to Source Breakdown Voltage100 V
In Stock:
18355
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4914 | |
| 10 | 0.4816 | |
| 100 | 0.4668 | |
| 1000 | 0.4521 | |
| 10000 | 0.4324 |
Associated Product
